PART |
Description |
Maker |
HYB25D256400BT HYB25D256800BC-7 HYB25D256400BT-7 H |
256Mbit (64Mx4) DDR200 (2-2-2) ?的256Mbit4Mx4)DDR200-2-2)? 256Mbit (64Mx4) DDR333 (2.5-3-3) 256Mbit (16Mx16) DDR200 (2-2-2) 256Mbit (32Mx8) DDR200 (2-2-2) 256Mbit (32Mx8) DDR266A (2-3-3) 256Mbit (64Mx4) DDR266A (2-3-3) 256Mb (64Mx4) FBGA DDR266A (2-3-3) 256-Mbit Double Data Rate SDRAM/ Die Rev. B 256-Mbit Double Data Rate SDRAM, Die Rev. B
|
http:// Infineon Technologies AG Infineon Technologies A...
|
HY62256A HY62256AJ HY62256AJ-I HY62256ALJ HY62256A |
32Kx8bit CMOS SRAM, standby current=25uA, 70ns 32Kx8bit CMOS SRAM, standby current=25uA, 55ns 32Kx8bit CMOS SRAM, standby current=25uA, 85ns 32Kx8bit CMOS SRAM, standby current=100uA, 70ns 32Kx8bit CMOS SRAM, standby current=100uA, 85ns 32Kx8bit CMOS SRAM, standby current=1mA, 70ns 32Kx8bit CMOS SRAM, standby current=1mA, 85ns 32Kx8bit CMOS SRAM, standby current=1mA, 55ns 32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM Circular Connector; No. of Contacts:22; Series:MS27497; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No 32Kx8bit CMOS SRAM JT 22C 22#22D SKT RECP 32Kx8bit CMOS SRAM
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc. ETC HYNIX[Hynix Semiconductor] http://
|
HM62V256LFP-8ULT HM62V256LTM-8UL |
32,768-word x 8-bit low voltage operation CMOS static RAM, 85ns
|
Hitachi Semiconductor
|
K4J55323QF-GC15 K4J55323QF-GC14 K4J55323QF-GC16 K4 |
256Mbit GDDR3 SDRAM
|
Samsung Electronic
|
HYB25D256400BC-5 |
256Mbit Double Data Rate (DDR) Components
|
Infineon
|
HYB25D256160CC-5 HYB25D256160CT-5 HYB25D256160CT-6 |
256Mbit Double Data Rate (DDR) Components
|
Infineon
|
K4S561632D K4S561632D-TC_L75 K4S561632D-TC_L1H K4S |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
V54C3256 V54C3256804VS V54C3256404VS V54C3256404VT |
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 256Mbit SDRAM 3.3 VOLT/ TSOP II / SOC BGA / WBGA PACKAGE 16M X 16/ 32M X 8/ 64M X 4
|
Mosel Vitelic, Corp. Mosel Vitelic Corp
|
K4S560432B-TC_L1H K4S560432B-TC_L1L K4S560432B-TC_ |
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM6x 4位4银行同步DRAM LVTTL
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
V54C3256164VS V54C3256164VT V54C3256404VS V54C3256 |
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 3.3V, 2K refresh ultra-high performance 1M x 16 SDRAM 2 banks x 512Kbit x 16
|
Mosel Vitelic Corp
|